The metal-oxide-semiconductor field effect transistor is a family of unipolar field effect transistors widely used in digital electronics but also diffused in analog electronics. The field effect transistor principle was designed by Lilienfeld in 1925, while the first MOSFET was manufactured by Kahng and Atalla in 1959 at Bell Laboratories.
The MOSFET is composed of a substrate of doped semiconductor material, usually silicon and three terminals are applied: gate, source and drain. The application of a voltage at the gate allows to control the passage of charges between the source and the drain, and thus the electrical current passing through the device. Depending on whether the body semiconductor doping type is type n or type p, the transistor takes the name pMOSFET and nMOSFET, often abbreviated in pMOS and nMOS, due to the complementary doping channel that is created in the substrate
